STD35P6LLF6
| Parameters | |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Transistor Element Material | SILICON |
| Input Capacitance (Ciss) (Max) @ Vds | 3780pF @ 25V |
| Manufacturer Package Identifier | DPAK-0068772_type-A2 |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Operating Temperature | 175°C TJ |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| Series | STripFET™ F6 |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 171 ns |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID) | 35A |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Gate to Source Voltage (Vgs) | 20V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Drain-source On Resistance-Max | 0.036Ohm |
| Base Part Number | STD35 |
| JESD-30 Code | R-PSSO-G2 |
| Drain to Source Breakdown Voltage | 60V |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Max Junction Temperature (Tj) | 175°C |
| Number of Channels | 1 |
| Height | 2.63mm |
| Power Dissipation-Max | 70W Tc |
| RoHS Status | ROHS3 Compliant |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 70W |
| Case Connection | DRAIN |
| Turn On Delay Time | 51.4 ns |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 28m Ω @ 17.5A, 10V |
| Mounting Type | Surface Mount |
See Relate Datesheet