SQM50028EM_GE3
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
| Supplier Device Package | TO-263-7 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 375W Tc |
| Power Dissipation | 375W |
| Turn On Delay Time | 48 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 11900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 185nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 105 ns |
| Continuous Drain Current (ID) | 120A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Max Junction Temperature (Tj) | 175°C |
| Drain to Source Resistance | 1.63mOhm |
| Height | 5.08mm |
| RoHS Status | RoHS Compliant |
See Relate Datesheet