SQM120P06-07L_GE3
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D2Pak) |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 375W Tc |
| Power Dissipation | 375W |
| Turn On Delay Time | 15 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 14280pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 97 ns |
| Continuous Drain Current (ID) | -120A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| Max Junction Temperature (Tj) | 175°C |
| Drain to Source Resistance | 5.6mOhm |
| Height | 5.08mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet