SQJQ100E-T1_GE3
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PowerPAK® 8 x 8 |
| Manufacturer Package Identifier | C14-0891-SINGLE |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 150W Tc |
| Power Dissipation | 150W |
| Turn On Delay Time | 22 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 14780pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 200A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 52 ns |
| Continuous Drain Current (ID) | 200A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Max Junction Temperature (Tj) | 175°C |
| Drain to Source Resistance | 900μOhm |
| Height | 2.03mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet