SQJ850EP-T1_GE3
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Number of Pins | 8 |
| Supplier Device Package | PowerPAK® SO-8 |
| Weight | 506.605978mg |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 23mOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 45W Tc |
| Element Configuration | Single |
| Power Dissipation | 45W |
| Turn On Delay Time | 21 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 10.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1225pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 24A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 24A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 1.225nF |
| Max Junction Temperature (Tj) | 175°C |
| Drain to Source Resistance | 19mOhm |
| Rds On Max | 23 mΩ |
| Nominal Vgs | 2 V |
| Height | 1.267mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet