SQD50N10-8M9L_GE3

SQD50N10-8M9L_GE3

MOSFET N-CHAN 100V TO252


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQD50N10-8M9L_GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 752
  • Description: MOSFET N-CHAN 100V TO252 (Kg)

Details

Tags

Parameters
Fall Time (Typ) 120 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 2V
Height 2.38mm
Length 6.22mm
Width 6.73mm
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 1.437803g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 136W Tc
Element Configuration Single
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
See Relate Datesheet

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