SQD10N30-330H_GE3
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Power Dissipation-Max | 107W Tc |
| Power Dissipation | 107W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 330m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id | 4.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 300V |
| Max Junction Temperature (Tj) | 175°C |
| Height | 2.507mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet