| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 600mOhm |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 650V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 7.3A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 83W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 83W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 600m Ω @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 350μA |
| Halogen Free | Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 170 ns |
| Continuous Drain Current (ID) | 7.3A |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 600V |
| Dual Supply Voltage | 600V |
| Nominal Vgs | 4.5 V |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |