SPA06N80C3
| Parameters | |
|---|---|
| Mount | Through Hole |
| Number of Pins | 3 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Number of Terminations | 3 |
| Terminal Finish | TIN |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 800V |
| Terminal Position | SINGLE |
| Current Rating | 6A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 39W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 25 ns |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Drain to Source Voltage (Vdss) | 800V |
| Polarity/Channel Type | N-CHANNEL |
| Continuous Drain Current (ID) | 6A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 800V |
| Drain Current-Max (Abs) (ID) | 6A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 780mOhm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet