| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 1996 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 2.4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 230mA, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 26μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 230mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
| Rise Time | 2.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8.5 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 230mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 5Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Feedback Cap-Max (Crss) | 4.5 pF |
| Height | 800μm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |