| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 2 |
| JESD-30 Code | R-PDSO-F2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Diode Type | PIN - Single |
| Power Dissipation | 250mW |
| Application | ATTENUATOR |
| Forward Voltage | 800mV |
| Capacitance @ Vr, F | 0.3pF @ 30V 1MHz |
| Reverse Voltage | 200V |
| Voltage - Peak Reverse (Max) | 200V |
| Frequency Band | HIGH FREQUENCY TO L B |
| Resistance @ If, F | 2Ohm @ 100mA 100MHz |
| Diode Capacitance-Max | 0.3pF |
| Minority Carrier Lifetime-Nom | 1 μs |
| Diode Forward Resistance-Max | 2Ohm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 49 Weeks |
| Mount | Surface Mount |
| Package / Case | SC-79, SOD-523 |
| Number of Pins | 79 |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TA |
| Packaging | Cut Tape (CT) |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |