SISS23DN-T1-GE3
| Parameters | |
|---|---|
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 50 ns |
| Turn-Off Delay Time | 140 ns |
| Continuous Drain Current (ID) | 27A |
| Threshold Voltage | 900mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8S |
| Number of Pins | 8 |
| Operating Temperature | -50°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 4.8W Ta 57W Tc |
| Element Configuration | Single |
| Power Dissipation | 4.8W |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 4.5m Ω @ 20A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8840pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Rise Time | 50ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
See Relate Datesheet