SIS436DN-T1-GE3
| Parameters | |
|---|---|
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 4.5mOhm |
| Terminal Finish | MATTE TIN |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| JESD-30 Code | S-XDSO-C5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.5W Ta 27.7W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 855pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 25V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 16A |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 32A |
| DS Breakdown Voltage-Min | 25V |
| Height | 1.04mm |
| Length | 3.05mm |
| Width | 3.05mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
See Relate Datesheet