SIR826ADP-T1-GE3
| Parameters | |
|---|---|
| Power Dissipation | 6.25W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Fall Time (Typ) | 8 ns |
| Package / Case | PowerPAK® SO-8 |
| Turn-Off Delay Time | 34 ns |
| Number of Pins | 8 |
| Continuous Drain Current (ID) | 23.8A |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Threshold Voltage | 1.2V |
| Gate to Source Voltage (Vgs) | 20V |
| Manufacturer Package Identifier | S17-0173-Single |
| Operating Temperature | -55°C~150°C TJ |
| Drain Current-Max (Abs) (ID) | 60A |
| Packaging | Digi-Reel® |
| Drain to Source Breakdown Voltage | 80V |
| Published | 2013 |
| Max Junction Temperature (Tj) | 150°C |
| Series | TrenchFET® |
| Height | 1.12mm |
| Pbfree Code | yes |
| Radiation Hardening | No |
| Part Status | Active |
| REACH SVHC | Unknown |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 5.5mOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-C5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 6.25W Ta 104W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
See Relate Datesheet