SIR662DP-T1-GE3
| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| JESD-30 Code | R-XDSO-C5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 6.25W Ta 104W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Factory Lead Time | 14 Weeks |
| Power Dissipation | 6.25W |
| Mount | Surface Mount |
| Case Connection | DRAIN |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Package / Case | PowerPAK® SO-8 |
| Transistor Application | SWITCHING |
| Number of Pins | 8 |
| Rds On (Max) @ Id, Vgs | 2.7m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Weight | 506.605978mg |
| Input Capacitance (Ciss) (Max) @ Vds | 4365pF @ 30V |
| Transistor Element Material | SILICON |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Operating Temperature | -55°C~150°C TJ |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| Packaging | Tape & Reel (TR) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Published | 2011 |
| Vgs (Max) | ±20V |
| Series | TrenchFET® |
| Continuous Drain Current (ID) | 60A |
| Threshold Voltage | 1V |
| Pbfree Code | yes |
| Gate to Source Voltage (Vgs) | 20V |
| DS Breakdown Voltage-Min | 60V |
| Part Status | Active |
| Nominal Vgs | 1 V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| Number of Terminations | 5 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| ECCN Code | EAR99 |
| Resistance | 2.7mOhm |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
See Relate Datesheet