Parameters | |
---|---|
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 5W |
Case Connection | DRAIN |
Turn On Delay Time | 140 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.2m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 9080pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 310nC @ 10V |
Rise Time | 130ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 100 ns |
Turn-Off Delay Time | 300 ns |
Continuous Drain Current (ID) | 50A |
Threshold Voltage | -600mV |
Gate to Source Voltage (Vgs) | 12V |
Drain-source On Resistance-Max | 0.0032Ohm |
Drain to Source Breakdown Voltage | -20V |
Avalanche Energy Rating (Eas) | 45 mJ |
Height | 1.12mm |
Length | 6.25mm |
Width | 5.26mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 14 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Number of Pins | 8 |
Weight | 506.605978mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Series | TrenchFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | C BEND |
JESD-30 Code | R-PDSO-C5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 5W Ta 39W Tc |