SIHD2N80E-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | E |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 62.5W Tc |
| Power Dissipation | 62.5W |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.75 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 19.6nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 2.8A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 800V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 2.507mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet