SIDR870ADP-T1-GE3
| Parameters | |
|---|---|
| Power Dissipation-Max | 125W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 6.6m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2866pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 95A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
See Relate Datesheet