SIA533EDJ-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Number of Pins | 6 |
| Weight | 28.009329mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 34MOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 7.8W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | SIA533 |
| Pin Count | 6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 7.8W |
| Case Connection | DRAIN |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 34m Ω @ 4.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Drain to Source Voltage (Vdss) | 12V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Continuous Drain Current (ID) | 4.5A |
| Threshold Voltage | 400mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 12V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 400 mV |
| Height | 800μm |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet