SI8823EDB-T2-E1
| Parameters | |
|---|---|
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® Gen III |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 900mW Tc |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 30 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA |
See Relate Datesheet