SI8425DB-T1-E1
| Parameters | |
|---|---|
| Factory Lead Time | 21 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA, WLCSP |
| Number of Pins | 4 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Resistance | 23mOhm |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.1W Ta 2.7W Tc |
| Element Configuration | Single |
| Power Dissipation | 2.7W |
| Turn On Delay Time | 50 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 50ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 200 ns |
| Turn-Off Delay Time | 600 ns |
| Continuous Drain Current (ID) | 9.3A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain to Source Breakdown Voltage | -20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet