SI8424CDB-T1-E1
| Parameters | |
|---|---|
| Factory Lead Time | 21 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA, WLCSP |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2014 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 20mOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.1W Ta 2.7W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.7W |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2340pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 4.5V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 8V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
| Vgs (Max) | ±5V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 150 ns |
| Continuous Drain Current (ID) | 10A |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 5V |
| DS Breakdown Voltage-Min | 8V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet