SI7464DP-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Number of Pins | 8 |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Pure Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 240m Ω @ 2.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 1.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 12ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 1.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.24Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 8A |
| Avalanche Energy Rating (Eas) | 0.45 mJ |
| Turn Off Time-Max (toff) | 50ns |
| Turn On Time-Max (ton) | 35ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet