SI7232DN-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 23W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | SI7232 |
| Pin Count | 8 |
| JESD-30 Code | S-XDSO-C6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 16.4m Ω @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 8V |
| Rise Time | 10ns |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.0164Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Avalanche Energy Rating (Eas) | 11 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.17mm |
| Length | 3.05mm |
| Width | 3.05mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet