SI6415DQ-T1-GE3
| Parameters | |
|---|---|
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 16 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 19m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Rise Time | 17ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 73 ns |
| Continuous Drain Current (ID) | 6.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 30A |
| Height | 1mm |
| Length | 3mm |
| Width | 4.4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Number of Pins | 8 |
| Weight | 157.991892mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
See Relate Datesheet