SI5486DU-T1-GE3
| Parameters | |
|---|---|
| Published | 2013 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 15MOhm |
| Terminal Finish | PURE MATTE TIN |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| JESD-30 Code | R-XDSO-N3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.1W Ta 31W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 7.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 8V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Height | 750μm |
| Length | 3mm |
| Width | 1.9mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
See Relate Datesheet