SI5442DU-T1-GE3
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® ChipFET™ Single |
| Number of Pins | 8 |
| Manufacturer Package Identifier | C14-0630-ChipFET-Single |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | TrenchFET® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Pure Matte Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.1W Ta 31W Tc |
| Element Configuration | Single |
| Power Dissipation | 3.1W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 8A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 8V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 12.4A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 25A |
| Drain to Source Breakdown Voltage | 20V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 900μm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
See Relate Datesheet