SI4838BDY-T1-GE3
| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 22.5A |
| Threshold Voltage | 400mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 12V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 400 mV |
| Height | 1.75mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| REACH SVHC | Unknown |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 506.605978mg |
| RoHS Status | ROHS3 Compliant |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Lead Free | Lead Free |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 2.7mOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 8 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta 5.7W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.7m Ω @ 15A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5760pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 34A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 84nC @ 4.5V |
| Rise Time | 92ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 56 ns |
See Relate Datesheet