SI4435FDY-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2018 |
| Series | TrenchFET® Gen III |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Power Dissipation-Max | 4.8W Tc |
| Power Dissipation | 2.2W |
| Turn On Delay Time | 9 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 19m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 12.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | -8.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.75mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet