SI3475DV-T1-GE3
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 950mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 29ns |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 750mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.95A |
| Drain to Source Breakdown Voltage | 200V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Packaging | Cut Tape (CT) |
| Published | 2015 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 1.61Ohm |
| Terminal Finish | PURE MATTE TIN |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | Other Transistors |
| Max Power Dissipation | 3.2W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 1.61 Ω @ 900mA, 10V |
See Relate Datesheet