SI2343CDS-T1-GE3

SI2343CDS-T1-GE3

In a Pack of 20, P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 Vishay SI2343CDS-T1-GE3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2343CDS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 825
  • Description: In a Pack of 20, P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 Vishay SI2343CDS-T1-GE3 (Kg)

Details

Tags

Parameters
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.25W Ta 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 30 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.9A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 5.9A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Nominal Vgs -1.2 V
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 45MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good