SI2303CDS-T1-GE3

SI2303CDS-T1-GE3

MOSFET P-CH 30V 2.7A SOT23-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2303CDS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 489
  • Description: MOSFET P-CH 30V 2.7A SOT23-3 (Kg)

Details

Tags

Parameters
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta 2.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 37ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) -2.7A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -3 V
Height 1.12mm
Length 3.04mm
Width 1.4mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 190mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
See Relate Datesheet

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