SI1403CDL-T1-GE3
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 140m Ω @ 1.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 281pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| Rise Time | 26ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 2.1A |
| Threshold Voltage | 600mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Height | 900μm |
| Length | 2.05mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 7.512624mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 600mW Ta 900mW Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 600mW |
| Turn On Delay Time | 18 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
See Relate Datesheet