SI1050X-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 32.006612mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 236mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 6.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 86m Ω @ 1.34A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 585pF @ 4V |
| Current - Continuous Drain (Id) @ 25°C | 1.34A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 11.6nC @ 5V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 8V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±5V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 1.34A |
| Gate to Source Voltage (Vgs) | 5V |
| Pulsed Drain Current-Max (IDM) | 6A |
| DS Breakdown Voltage-Min | 8V |
| Nominal Vgs | 5 V |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.2mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet