SI1012CR-T1-GE3
| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 396mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 240mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 240mW |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 396m Ω @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 8V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 630mA |
| Threshold Voltage | 400mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Factory Lead Time | 14 Weeks |
| Max Junction Temperature (Tj) | 150°C |
| Mount | Surface Mount |
| Height | 800μm |
| Length | 1.68mm |
| Mounting Type | Surface Mount |
| Width | 860μm |
| Package / Case | SC-75, SOT-416 |
| Radiation Hardening | No |
| Number of Pins | 3 |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Weight | 2.012816mg |
| Lead Free | Lead Free |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
See Relate Datesheet