| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Power Dissipation-Max | 15W Tc |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Turn On Delay Time | 10 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 62m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Rise Time | 37ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 75 ns |
| Turn-Off Delay Time | 135 ns |
| Continuous Drain Current (ID) | 12A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |