| Parameters | |
|---|---|
| Mount | Chassis Mount, Stud |
| Mounting Type | Chassis Mount |
| Package / Case | M135 |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 200°C TJ |
| Packaging | Bulk |
| Published | 2003 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Additional Feature | WITH EMITTER BALLASTED RESISTOR |
| Subcategory | Other Transistors |
| Max Power Dissipation | 13W |
| Terminal Position | RADIAL |
| Terminal Form | FLAT |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 35V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 200mA 5V |
| Collector Emitter Breakdown Voltage | 35V |
| Gain | 10dB |
| Max Frequency | 150MHz |
| Transition Frequency | 150MHz |
| Frequency - Transition | 150MHz |
| Collector Base Voltage (VCBO) | 65V |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 15pF |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |