SCT20N120
| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Weight | 38.000013g |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | SiCFET (Silicon Carbide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | SCT20 |
| Number of Channels | 1 |
| Power Dissipation-Max | 175W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 290m Ω @ 10A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 20V |
| Rise Time | 16ns |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 1.2kV |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet