S200-50
| Parameters | |
|---|---|
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | 55HX |
| Number of Pins | 55 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Subcategory | BIP RF Small Signal |
| Max Power Dissipation | 320W |
| Terminal Position | RADIAL |
| Terminal Form | FLAT |
| Pin Count | 4 |
| JESD-30 Code | O-CRFM-F4 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | EMITTER |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 110V |
| Max Collector Current | 30A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A 5V |
| Collector Emitter Breakdown Voltage | 110V |
| Gain | 12dB ~ 14.5dB |
| Max Frequency | 30MHz |
| Frequency - Transition | 1.5MHz~30MHz |
| Highest Frequency Band | HIGH FREQUENCY B |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet