RUF025N02TL
| Parameters | |
|---|---|
| Package / Case | 3-SMD, Flat Lead |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 320mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 800mW |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 54m Ω @ 2.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 2.5A |
| Threshold Voltage | 300mV |
| Gate to Source Voltage (Vgs) | 10V |
| Drain-source On Resistance-Max | 0.068Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Nominal Vgs | 300 mV |
| Height | 820μm |
| Length | 2.1mm |
| Width | 1.8mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
See Relate Datesheet