| Parameters | |
|---|---|
| Power Dissipation | 80mW |
| Forward Current | 50mA |
| Response Time | 10μs, 10μs |
| Rise Time | 10μs |
| Forward Voltage | 1.3V |
| Fall Time (Typ) | 10 μs |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 30mA |
| Sensing Distance | 0.118 (3mm) |
| Collector Emitter Breakdown Voltage | 30V |
| Wavelength | 950 nm |
| Sensing Method | Through-Beam |
| Height | 5.4mm |
| Length | 6.4mm |
| Width | 4.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | PCB Mount |
| Number of Pins | 352 |
| Operating Temperature | -25°C~85°C |
| Packaging | Bulk |
| Published | 2005 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Voltage - Rated DC | 1.3V |
| Max Power Dissipation | 80mW |
| Number of Channels | 1 |
| Output Configuration | Phototransistor |