RJH60V3BDPE-00#J3
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-83 |
| Number of Pins | 83 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 113W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | RJH60V |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 113W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.2V |
| Max Collector Current | 35A |
| Reverse Recovery Time | 25 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 60 ns |
| Test Condition | 300V, 17A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 17A |
| Turn Off Time-Nom (toff) | 165 ns |
| IGBT Type | Trench |
| Gate Charge | 60nC |
| Td (on/off) @ 25°C | 40ns/90ns |
| Switching Energy | 90μJ (on), 300μJ (off) |
| Gate-Emitter Voltage-Max | 30V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet