| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Max Power Dissipation | 300W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | RJH60D |
| Pin Count | 4 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Turn On Delay Time | 60 ns |
| Power - Max | 300W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 190 ns |
| Collector Emitter Voltage (VCEO) | 2.2V |
| Max Collector Current | 90A |
| Reverse Recovery Time | 100 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 106 ns |
| Test Condition | 300V, 50A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 240 ns |
| IGBT Type | Trench |
| Gate Charge | 130nC |
| Td (on/off) @ 25°C | 60ns/190ns |
| Switching Energy | 1.1mJ (on), 600μJ (off) |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |