QSD123A4R0
| Parameters | |
|---|---|
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | SINGLE |
| Power Dissipation | 100mW |
| Viewing Angle | 24° |
| Optoelectronic Device Type | PHOTO TRANSISTOR |
| Size | 5mm |
| Rise Time | 7μs |
| Fall Time (Typ) | 7 μs |
| Collector Emitter Voltage (VCEO) | 5V |
| Max Collector Current | 16mA |
| Collector Emitter Breakdown Voltage | 30V |
| Wavelength | 880nm |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 30V |
| Dark Current | 100nA |
| Infrared Range | YES |
| Light Current-Nom | 4mA |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | Radial, 5mm Dia (T 1 3/4) |
| Number of Pins | 2 |
| Weight | 284mg |
| Shape | ROUND |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Subcategory | Photo Transistors |
| Max Power Dissipation | 100mW |
| Orientation | Top View |
| Number of Functions | 1 |
See Relate Datesheet