| Parameters | |
|---|---|
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Published | 2017 |
| Part Status | Active |
| Number of Terminations | 10 |
| ECCN Code | EAR99 |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| JESD-30 Code | S-PDSO-N10 |
| Operating Temperature (Max) | 225°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| DS Breakdown Voltage-Min | 105V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Power Gain-Min (Gp) | 20.5dB |
| RoHS Status | Non-RoHS Compliant |