| Parameters | |
|---|---|
| Package / Case | H-34275G-6/2 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tray |
| Published | 2015 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Voltage - Rated | 65V |
| Terminal Position | QUAD |
| Terminal Form | UNSPECIFIED |
| Reach Compliance Code | unknown |
| Frequency | 1.99GHz |
| JESD-30 Code | R-CQSO-X6 |
| Operating Temperature (Max) | 200°C |
| Operating Supply Voltage | 30V |
| Number of Elements | 2 |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| Operating Mode | ENHANCEMENT MODE |
| Current - Test | 2.65A |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS (Dual), Common Source |
| Gain | 19dB |
| DS Breakdown Voltage-Min | 65V |
| Power - Output | 80W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |