PSMN1R0-30YLDX
| Parameters | |
|---|---|
| Power Dissipation-Max | 238W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 32.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.02m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 2mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8598pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 121.35nC @ 10V |
| Rise Time | 44.4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 31.7 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | MO-235 |
| Gate to Source Voltage (Vgs) | 20V |
| Factory Lead Time | 12 Weeks |
| Max Dual Supply Voltage | 30V |
| Contact Plating | Tin |
| Drain to Source Breakdown Voltage | 30V |
| Mounting Type | Surface Mount |
| Radiation Hardening | No |
| Package / Case | SC-100, SOT-669 |
| RoHS Status | ROHS3 Compliant |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
See Relate Datesheet