| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Power - Max | 625mW |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 20V |
| Drain-source On Resistance-Max | 30Ohm |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 3.5 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50mA @ 20V |
| Voltage - Cutoff (VGS off) @ Id | 4V @ 1nA |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Resistance - RDS(On) | 30Ohm |
| RoHS Status | ROHS3 Compliant |