PMPB85ENEAX
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | S-PDSO-N6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.6W Ta 15.6W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 305pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 10V |
| Rise Time | 3.5ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.5 ns |
| Turn-Off Delay Time | 10.5 ns |
| Continuous Drain Current (ID) | 3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.095Ohm |
| Pulsed Drain Current-Max (IDM) | 12A |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 12.6 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet