| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 300mA Ta |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 300mA |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain to Source Breakdown Voltage | 60V |
| Nominal Vgs | 2 V |
| Min Breakdown Voltage | 60V |
| Height | 1mm |
| Length | 3mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| REACH SVHC | No SVHC |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| RoHS Status | ROHS3 Compliant |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Lead Free | Lead Free |
| Published | 1997 |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 5Ohm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 830mW Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 830mW |
| FET Type | N-Channel |